Randomly-oriented indium phosphide nanowires for optoelectronics
Identifieur interne : 007205 ( Main/Repository ); précédent : 007204; suivant : 007206Randomly-oriented indium phosphide nanowires for optoelectronics
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Abstract
The concept of randomly-oriented semiconductor nanowires formed on non-single-crystal substrates is introduced and compared with semiconductor nanowires synthesized on single-crystal-substrates in the framework of epitaxial growth. In principle, epitaxial growth of semiconductor nanowires with the presence of metal-catalysts requires no single-crystal substrates owing to the small size of nanowires. A segment on a substrate from which crystallographic information is transferred to a single nanowire would only need to be as larger as the cross-section of a nanowire if a specific geometrical alignment for a group of nanowires is not required, suggesting that randomly-oriented semiconductor nanowires be formed on a surface that is characterized with short-range atomic order in contrast to long-range atomic order that exists on the surface of single-crystal substrates. The surfaces exhibiting short-range atomic order can be prepared on non-single-crystal substrates, further suggesting functional devices that utilize randomly-oriented semiconductor nanowires be fabricated on non-single-crystal substrates. Design, fabrication and characteristics of a photoconductor that utilizes an ensemble of randomly-oriented indium phosphide nanowires are described.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Randomly-oriented indium phosphide nanowires for optoelectronics</title><author><name sortKey="Kobayashi, Nobuhiko P" uniqKey="Kobayashi N">Nobuhiko P. Kobayashi</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Baskin School of Engineering, University of California -Santa Cruz</s1><s2>Santa Cruz, CA 95064</s2><s3>USA</s3><sZ>1 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Santa Cruz, CA 95064</wicri:noRegion></affiliation><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Quantum Science Research, Hewlett-Packard Laboratories</s1><s2>Palo Alto, CA 94304</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Palo Alto, CA 94304</wicri:noRegion></affiliation></author><author><name sortKey="Logeeswaran, V J" uniqKey="Logeeswaran V">V. J. Logeeswaran</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Dept. of Electrical and Computer Engineering, University of California -Davis</s1><s2>CA 95616</s2><s3>USA</s3><sZ>2 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Californie</region></placeName></affiliation></author><author><name>XUEMA LI</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Quantum Science Research, Hewlett-Packard Laboratories</s1><s2>Palo Alto, CA 94304</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Palo Alto, CA 94304</wicri:noRegion></affiliation></author><author><name sortKey="Saif Islam, M" uniqKey="Saif Islam M">M. Saif Islam</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Dept. of Electrical and Computer Engineering, University of California -Davis</s1><s2>CA 95616</s2><s3>USA</s3><sZ>2 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>États-Unis</country><placeName><region type="state">Californie</region></placeName></affiliation></author><author><name sortKey="Sdaznicky, Joseph" uniqKey="Sdaznicky J">Joseph Sdaznicky</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Quantum Science Research, Hewlett-Packard Laboratories</s1><s2>Palo Alto, CA 94304</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Palo Alto, CA 94304</wicri:noRegion></affiliation></author><author><name sortKey="Wang, Shih Yuan" uniqKey="Wang S">Shih-Yuan Wang</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Quantum Science Research, Hewlett-Packard Laboratories</s1><s2>Palo Alto, CA 94304</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Palo Alto, CA 94304</wicri:noRegion></affiliation></author><author><name sortKey="Williams, R Stanley" uniqKey="Williams R">R. Stanley Williams</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Quantum Science Research, Hewlett-Packard Laboratories</s1><s2>Palo Alto, CA 94304</s2><s3>USA</s3><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country>États-Unis</country><wicri:noRegion>Palo Alto, CA 94304</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">08-0428257</idno><date when="2007">2007</date><idno type="stanalyst">PASCAL 08-0428257 INIST</idno><idno type="RBID">Pascal:08-0428257</idno><idno type="wicri:Area/Main/Corpus">006417</idno><idno type="wicri:Area/Main/Repository">007205</idno></publicationStmt><seriesStmt><idno type="ISSN">0277-786X</idno><title level="j" type="main">Proceedings of SPIE - The International Society for Optical Engineering</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Binary compounds</term><term>Experimental study</term><term>III-V semiconductors</term><term>Indium Phosphides</term><term>Indium phosphide</term><term>Monocrystals</term><term>Nanophotonics</term><term>Optical communication</term><term>Photoconductors</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term><term>Monocristal</term><term>Photoconducteur</term><term>Composé binaire</term><term>Semiconducteur III-V</term><term>Indium Phosphure</term><term>Phosphure d'indium</term><term>Nanophotonique</term><term>Télécommunication optique</term><term>In P</term><term>InP</term><term>0130C</term><term>4279</term><term>4279S</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">The concept of randomly-oriented semiconductor nanowires formed on non-single-crystal substrates is introduced and compared with semiconductor nanowires synthesized on single-crystal-substrates in the framework of epitaxial growth. In principle, epitaxial growth of semiconductor nanowires with the presence of metal-catalysts requires no single-crystal substrates owing to the small size of nanowires. A segment on a substrate from which crystallographic information is transferred to a single nanowire would only need to be as larger as the cross-section of a nanowire if a specific geometrical alignment for a group of nanowires is not required, suggesting that randomly-oriented semiconductor nanowires be formed on a surface that is characterized with short-range atomic order in contrast to long-range atomic order that exists on the surface of single-crystal substrates. The surfaces exhibiting short-range atomic order can be prepared on non-single-crystal substrates, further suggesting functional devices that utilize randomly-oriented semiconductor nanowires be fabricated on non-single-crystal substrates. Design, fabrication and characteristics of a photoconductor that utilizes an ensemble of randomly-oriented indium phosphide nanowires are described.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0277-786X</s0></fA01><fA05><s2>6779</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Randomly-oriented indium phosphide nanowires for optoelectronics</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Nanophotonics for communication : materials, devices, and systems IV : 10-11 September 2007, Boston, Massachusetts, USA</s1></fA09><fA11 i1="01" i2="1"><s1>KOBAYASHI (Nobuhiko P.)</s1></fA11><fA11 i1="02" i2="1"><s1>LOGEESWARAN (V. J.)</s1></fA11><fA11 i1="03" i2="1"><s1>XUEMA LI</s1></fA11><fA11 i1="04" i2="1"><s1>SAIF ISLAM (M.)</s1></fA11><fA11 i1="05" i2="1"><s1>SDAZNICKY (Joseph)</s1></fA11><fA11 i1="06" i2="1"><s1>WANG (Shih-Yuan)</s1></fA11><fA11 i1="07" i2="1"><s1>WILLIAMS (R. 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All rights reserved.</s1></fA44><fA45><s0>47 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>08-0428257</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Proceedings of SPIE - The International Society for Optical Engineering</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>The concept of randomly-oriented semiconductor nanowires formed on non-single-crystal substrates is introduced and compared with semiconductor nanowires synthesized on single-crystal-substrates in the framework of epitaxial growth. In principle, epitaxial growth of semiconductor nanowires with the presence of metal-catalysts requires no single-crystal substrates owing to the small size of nanowires. A segment on a substrate from which crystallographic information is transferred to a single nanowire would only need to be as larger as the cross-section of a nanowire if a specific geometrical alignment for a group of nanowires is not required, suggesting that randomly-oriented semiconductor nanowires be formed on a surface that is characterized with short-range atomic order in contrast to long-range atomic order that exists on the surface of single-crystal substrates. The surfaces exhibiting short-range atomic order can be prepared on non-single-crystal substrates, further suggesting functional devices that utilize randomly-oriented semiconductor nanowires be fabricated on non-single-crystal substrates. 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